Integral

Integral M323R4GA3DB0-CWM-IN Memory Module Computer Component

32GB PC RAM MODULE DDR5 5600MHZ PC5-44800 UNBUFFERED NON-ECC 1.1V 2GX8 CL46 EQV. TO M323R4GA3DB0-CWM FOR SAMSUNG

Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.

A computer's memory which is directly accessible to the CPU.

How the overall memory of the product is put together, defined by the number of modules and the size.

The type of internal memory such as RAM, GDDR5.

The frequency at which the memory (e.g. RAM) runs.

What this product is used as a part of (component for).

Design of the memory e.g. 240-pin DIMM, SO-DIMM.

ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.

The voltage (V) of the memory in the device.

The measurement or extent of something from side to side.

The measurement of the product from head to foot or from base to top.

Integral 32GB PC RAM MODULE DDR5 5600MHZ PC5-44800 UNBUFFERED NON-ECC 1.1V 2GX8 CL46 EQV. TO M323R4GA3DB0-CWM FOR SAMSUNG. Component for: PC, Internal memory: 32 GB, Memory layout (modules x size): 1 x 32 GB, Internal memory type: DDR5, Memory clock speed: 5600 MHz, Memory form factor: 288-pin DIMM, CAS latency: 46

Integral 32GB PC RAM MODULE DDR5 5600MHZ PC5-44800 UNBUFFERED NON-ECC 1.1V 2GX8 CL46 EQV. TO M323R4GA3DB0-CWM FOR SAMSUNG, 32 GB, 1 x 32 GB, DDR5, 5600 MHz, 288-pin DIMM

Integral M323R4GA3DB0-CWM-IN Memory Module Computer Component

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Integral 32GB PC RAM MODULE DDR5 5600MHZ PC5-44800 UNBUFFERED NON-ECC 1.1V 2GX8 CL46 EQV. TO M323R4GA3DB0-CWM FOR SAMSUNG

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