The HYB39S256400/800/160CT(L) are four bank Synchronous DRAM’s organized as 4 banks x
16MBit x4, 4 banks x 8MBit x8 and 4 banks x 4Mbit x16 respectively. These synchronous devices
achieve high speed data transfer rates for CAS-latencies by employing a chip architecture that
prefetches multiple bits and then synchronizes the output data to a system clock. The chip is
fabricated with INFINEON’s advanced 0.17 μm 256MBit DRAM process technology.
The device is designed to comply with all industry standards set for synchronous DRAM products,
both electrically and mechanically. All of the control, address, data input and output circuits are
synchronized with the positive edge of an externally supplied clock.
Operating the four memory banks in an interleave fashion allows random access operation to occur
at higher rate than is possible with standard DRAMs. A sequential and gapless data rate is possible
depending on burst length, CAS latency and speed grade of the device.
Reviews
Description
Specification
Reviews
Loading...
Description
Product Features:
- PC/Server 0.5 GB DDR 133 MHz
- 1 x 0.5 GB
- CAS latency: 3
- 3.3 V
Infineon HYB39S256400CT-7.5 memory module 0.5 GB 1 x 0.5 GB DDR 133 MHz
HYB39S256400CT-7.5, 512MB DDR PC-133
Infineon HYB39S256400CT-7.5, 0.5 GB, 1 x 0.5 GB, DDR, 133 MHz
Infineon HYB39S256400CT-7.5. Component for: PC/Server, Internal memory: 0.5 GB, Memory layout (modules x size): 1 x 0.5 GB, Internal memory type: DDR, Memory clock speed: 133 MHz, CAS latency: 3
Specification
Features
CAS latency
3
Internal memory
0.5 GB
Memory layout (modules x size)
1 x 0.5 GB
Internal memory type
DDR
Memory clock speed
133 MHz
Component for
PC/Server
Memory voltage
3.3 V